| PART |
Description |
Maker |
| PDTD113ZT PDTD113ZT215 PDTD113ZT-13 PDTD113ZT-15 |
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm
NPN 500 mA, 50 V resistor-equipped transistor R1 = 1 kW, R2 = 10 kW
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kW, R2 = 10 kW
|
NXP Semiconductors N.V.
|
| PDTD123YT215 |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
|
NXP Semiconductors N.V.
|
| 2SC1317 2SC1318 2SA719 2SA720 |
Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification) 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| KSC5025YTU |
15 A, 500 V, NPN, Si, POWER TRANSISTOR TO-3P, 3 PIN
|
Fairchild Semiconductor, Corp.
|
| MJW16206 |
POWER TRANSISTORS 12 AMPERES 1200 VOLTS - VCES 50 and 150 WATTS 12 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-247AE
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| KSC5021FRTU KSC5021FRTSTU |
5 A, 500 V, NPN, Si, POWER TRANSISTOR TO-220F, 3 PIN
|
Fairchild Semiconductor, Corp.
|
| 2N6517BU 2N6517BUNL |
NPN Epitaxial Silicon Transistor; Package: TO-92; No of Pins: 3; Container: Bulk 500 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
NPN Epitaxial Silicon Transistor 500 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
|
| BUJ301A |
Silicon Diffused Power Transistor 0.5 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PDTD123TT PDTD123TK PDTD123TS |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open NPN配电阻型晶体管：耐压0V，电00mAR1 = 2.2 千欧 R2 =开
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
|
NXP Semiconductors N.V.
|
| PZTA06 MMBTA06 MPSA06 |
NPN General Purpose Amplifier(NPN通用放大 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| MTD1P50E |
TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 OHM 1 A, 500 V, 15 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Motorola, Inc
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
|
